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WebJan 27, 2015 · The plasma jet etching decreased the initial S q value of 0.73 down to 0.2 µm. This smoothing effect was also observed on SiC [ 15 ]. The smoothing effect seems to be independent of the choice of plasma parameters (gas composition, working distance, scan velocity and RF power) and depends only on the etching depth. WebMar 31, 2015 · We investigate a radio-frequency powered atmospheric pressure He/N2/CF4 plasma jet for the local chemical etching of silicon using fluorine as reactive plasma gas component. This plasma jet tool ... oracle booking
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